tcet1110/ tcet1110g document number 83546 rev. 1.6, 26-oct-04 vishay semiconductors www.vishay.com 1 c e ac c 1791 8 _1 1 v de pb p b -free e3 optocoupler, phototransistor output, high temperature, 110 c rated features ? ctr offered in 9 groups isolation materials according to ul94-vo pollution degree 2 (din/vde 0110 / resp. iec 60664) climatic classification 55/100/21 (iec 60068 part 1) special construction: therefore, extra low coupling capacity of typical 0.2 pf, high c ommon m ode r ejection low temperature coefficient of ctr temperature range - 40 to + 110 c rated impulse voltage (transient overvoltage) v iotm = 8 kv peak isolation test voltage (partial discharge test volt- age) v pd = 1.6 kv rated isolation voltage (rms includes dc) v iowm = 600 v rms (848 v peak ) rated recurring peak voltage (repetitive) v iorm = 600 v rms creepage current resist ance according to vde 0303/iec 60112 c omparative t racking i ndex: cti 175 thickness through insulation 0.75 mm internal creepage distance > 4 mm external creepage distance > 8 mm lead-free component component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ul1577, file no. e76222 system code u, double protection bsi: en 60065:2002, en 60950:2000 certificate no. 7081 and 7402 din en 60747-5-2 (vde0884) din en 60747-5-5 pending fimko applications circuits for safe protective separation against electri- cal shock according to safety class ii (reinforced iso- lation): for appl. class i - iv at mains voltage 300 v for appl. class i - iii at mains voltage 600 v accord- ing to din en 60747-5-2(vde0884)/ din en 60747- 5-5 pending, table 2, suitable for: switch-mode power supplies, line receiver, computer peripheral interface, microprocessor system inter- face, with operating temperature up to 110c description the tcet1110/ tcet1110g consists of a pho- totransistor opti cally coupled to a gallium arsenide infrared-emitting diode in a 4-pin plastic dual inline package. the elements are mounted on one leadframe, provid- ing a fixed distance between input and output for high- est safety requirements. vde standards these couplers perform safety functions according to the following equipment standards: din en 60747-5-2(vde0884)/ din en 60747-5-5 pending / iec 60747:2003 optocoupler for electrical safety requirements iec 60950 office machines (applied for rein forced isolation for mains voltage < 400 vrms) vde 0804 telecommunication apparatus and data processing iec 60065 safety for mains-operated electronic and related household appa- ratus
www.vishay.com 2 document number 83546 rev. 1.6, 26-oct-04 tcet1110/ tcet1110g vishay semiconductors order information 4 pin = single channel g = lead form 10.16 mm; g is not marked on the body absolute maximum ratings t amb = 25 c, unless otherwise specified stresses in excess of the absolute maximum ratings can caus e permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operati onal sections of this document. exposure to absolute maximum rating for extended periods of the time can adversely affect reliability. input output part remarks tcet1110 ctr 50 - 600 %, dip-4 tcet1111 ctr 40 - 80 %, dip-4 tcet1112 ctr 63 - 125 %, dip-4 tcet1113 ctr 100 - 200 %, dip-4 tcet1114 ctr 160 - 320 %, dip-4 tcet1115 ctr 50 - 150 %, dip-4 tcet1116 ctr 100 - 300 %, dip-4 TCET1117 ctr 80 - 160 %, dip-4 tcet1118 ctr 130 - 260 %, dip-4 tcet1119 ctr 200 - 400 %, dip-4 tcet1110g ctr 50 - 600 %, dip-4 tcet1111g ctr 40 - 80 %, dip-4 tcet1112g ctr 63 - 125 %, dip-4 tcet1113g ctr 100 - 200 %, dip-4 tcet1114g ctr 160 - 320 %, dip-4 tcet1115g ctr 50 - 150 %, dip-4 tcet1116g ctr 100 - 300 %, dip-4 TCET1117g ctr 80 - 160 %, dip-4 tcet1118g ctr 130 - 260 %, dip-4 tcet1119g ctr 200 - 400 %, dip-4 parameter test condition symbol value unit reverse voltage v r 6v forward current i f 60 ma forward surge current t p 10 si fsm 1.5 a power dissipation p diss 100 mw junction temperature t j 125 c parameter test condition symbol value unit collector emitter voltage v ceo 70 v emitter collector voltage v eco 7v collector current i c 50 ma
tcet1110/ tcet1110g document number 83546 rev. 1.6, 26-oct-04 vishay semiconductors www.vishay.com 3 coupler electrical characteristics t amb = 25 c, unless otherwise specified minimum and maximum values are testing requirements. typical val ues are characteristics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. input output coupler collector peak current t p /t = 0.5, t p 10 ms i cm 100 ma power dissipation p diss 150 mw junction temperature t j 125 c parameter test condition symbol value unit isolation test voltage (rms) t = 1 min v iso 5000 v rms total power dissipation p tot 250 mw operating ambient temperature range t amb - 40 to + 110 c storage temperature range t stg - 55 to + 125 c soldering temperature 2 mm from case t 10 s t sld 260 c parameter test condition symbol min ty p. max unit forward voltage i f = 50 ma v f 1.25 1.6 v junction capacitance v r = 0 v, f = 1 mhz c j 50 pf parameter test condition symbol min ty p. max unit collector emitter voltage i c = 1 ma v ceo 70 v emitter collector voltage i e = 100 av eco 7v collector-emitter cut-off current v ce = 20 v, i f = 0, e = 0 i ceo 10 100 na parameter test condition symbol min ty p. max unit collector emitter saturation voltage i f = 10 ma, i c = 1 ma v cesat 0.3 v cut-off frequency v ce = 5 v, i f = 10 ma, r l = 100 ? f c 110 khz coupling capacitance f = 1 mhz c k 0.3 pf parameter test condition symbol value unit
www.vishay.com 4 document number 83546 rev. 1.6, 26-oct-04 tcet1110/ tcet1110g vishay semiconductors current transfer ratio maximum safety ratings (according to din en 60747-5-2(vde0884) / din en 60747-5-5 pending) see figure 1 this optocoupler is suitable for safe electrical isolation only within the safety ratings. compliance with the safety rati ngs shall be ensured by means of suitable protective circuits. input output coupler parameter test condition part symbol min ty p. max unit i c /i f v ce = 5 v, i f = 1 ma tcet1111 tcet1111g ctr 13 30 % tcet1112 tcet1112g ctr 22 45 % tcet1113 tcet1113g ctr 34 70 % tcet1114 tcet1114g ctr 56 90 % v ce = 5 v, i f = 5 ma tcet1110 tcet1110g ctr 50 600 % tcet1115 tcet1115g ctr 50 150 % tcet1116 tcet1116g ctr 100 300 % TCET1117 TCET1117g ctr 80 160 % tcet1118 tcet1118g ctr 130 260 % tcet1119 tcet1119g ctr 200 400 % v ce = 5 v, i f = 10 ma tcet1111 tcet1111g ctr 40 80 % tcet1112 tcet1112g ctr 63 125 % tcet1113 tcet1113g ctr 100 200 % tcet1114 tcet1114g ctr 160 320 % parameter test condition symbol min ty p. max unit forward current i f 130 ma parameter test condition symbol min ty p. max unit power dissipation p diss 265 mw parameter test condition symbol min ty p. max unit rated impulse voltage v iotm 8kv safety temperature t si 150 c
tcet1110/ tcet1110g document number 83546 rev. 1.6, 26-oct-04 vishay semiconductors www.vishay.com 5 insulation rated parameters parameter test condition symbol min ty p. max unit partial discharge test voltage - routine test 100 %, t test = 1 s v pd 1.6 kv partial discharge test voltage - lot test (sample test), (see figure 2) t tr = 60 s, t test = 10 s v iotm 8kv v pd 1.3 kv insulation resistance v io = 500 v r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? v io = 500 v, t amb = 150 c (construction test only) r io 10 9 ? figure 1. derating diagram 0 25 50 75 125 0 50 100 150 200 300 p ? total power dissipation ( mw ) tot t si ? safety temperature ( c ) 150 94 9182 100 250 phototransistor psi ( mw ) ir-diode isi ( ma ) figure 2. test pulse diagram for sa mple test according to din en 60747-5-2(vde0884)/ din en 60747-; iec60747 t 13930 t 1 , t 2 = 1 to 10 s t 3 , t 4 = 1 s t test = 10 s t stres = 12 s v iotm v pd v iowm v iorm 0 t 1 t test t tr = 60 s t stres t 3 t 4 t 2
www.vishay.com 6 document number 83546 rev. 1.6, 26-oct-04 tcet1110/ tcet1110g vishay semiconductors switching characteristics parameter test condition symbol min ty p. max unit delay time (see figure 3) v s = 5 v, i c = 2 ma, r l = 100 ? t d 3.0 s rise time (see figure 3) v s = 5 v, i c = 2 ma, r l = 100 ? t r 3.0 s turn-on time (see figure 3) v s = 5 v, i c = 2 ma, r l = 100 ? t on 6.0 s storage time (see figure 3) v s = 5 v, i c = 2 ma, r l = 100 ? t s 0.3 s fall time (see figure 3) v s = 5 v, i c = 2 ma, r l = 100 ? t f 4.7 s turn-off time (see figure 3) v s = 5 v, i c = 2 ma, r l = 100 ? t off 5.0 s turn-on time see figure 4) v s = 5 v, i f = 10 ma, r l = 1 k ? t on 9.0 s turn-off time see figure 4) v s = 5 v, i f = 10 ma, r l = 1 k ? t off 10.0 s figure 3. test circuit, non-saturated operation figure 4. test circuit, saturated operation channel i channel ii 95 10804 r g = 50 t p t p = 50 p s t = 0.01 + 5 v i f 0 50 100 i f i c = 2 ma; adjusted through input amplitude oscilloscope r l = 1 m c l = 20 pf channel i channel ii 95 10843 r g =50 ? t p t p =50 s t = 0.01 +5v i c i f 0 50 1k i f =10ma oscilloscope r l c l 20 pf ? m 1 ? ? t p t t 0 0 10% 90% 100% t r t d t on t s t f t off i f i c 96 11698 t p pulse duration t d delay time t r rise time t on (= t d +t r ) turn-on time t s storage time t f fall time t off (= t s +t f ) turn-of f time
tcet1110/ tcet1110g document number 83546 rev. 1.6, 26-oct-04 vishay semiconductors www.vishay.com 7 typical characteris tics (tamb = 25 c unless otherwise specified) figure 6. total power dissipat ion vs. ambient temperature figure 7. forward current vs. forward voltage figure 8. relative current transfer ratio vs. ambient temperature 0 50 100 150 200 250 300 0 20406080100120 t amb ? ambient temperature ( c ) 16736 p ?total power dissipation ( mw ) tot coupled device phototransistor ir?diode 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v f - forward voltag e(v) 96 11862 f i - forward current ( ma ) 0.00 0.20 0.40 0.60 0.80 1.00 1.20 ?40 ?20 0 20 40 60 80 100 120 t amb ? ambient temperature ( c ) 16737 vce = 5 v if = 5 ma ctr ? relative current transfer ratio rel figure 9. collector dark curre nt vs. ambient temperature figure 10. collector current vs. forward current figure 11. collector current vs. collector emitter voltage 1.00 10.00 100.00 1000.00 10000.00 0 20406080100120 1.00 10.00 100.00 1000.00 10000.00 0 t amb ? ambient temperature ( c ) 10000 1000 100 10 1 i ? collector dark current, ceo with open base ( na ) v ce = 30 v 10 v 16738 0.1 1 10 0.01 0.1 1 100 i C collector current ( ma ) c i f C forward current ( ma ) 100 95 11027 10 v ce =5v 0.1 1 10 0.1 1 10 100 v ce C collector emitter voltag e(v) 100 95 10985 i C collector current ( ma) c i f =50ma 5ma 2ma 1ma 20ma 10ma
www.vishay.com 8 document number 83546 rev. 1.6, 26-oct-04 tcet1110/ tcet1110g vishay semiconductors figure 12. collector emitter sa turation voltage vs. collector current figure 13. current transfer ratio vs. forward current figure 14. turn on / off time vs. collector current 110 0 0.2 0.4 0.6 0.8 1.0 v C collector emitter saturation voltage (v) cesat i c C collector current ( ma ) 100 ctr=50% 20% 10% 95 11028 0.1 1 10 1 10 100 1000 ctr C current transfer ratio ( % ) i f C forward current ( ma ) 100 95 11029 v ce =5v 02 4 6 0 2 4 6 8 10 i c C collector current ( ma ) 10 95 11030 t / t Cturn on / turn off time ( s ) off on non saturated operation v s =5v r l =100 ? t off t on figure 15.turnon/offtimes.forwardcurrent 0 5 10 15 0 10 20 30 40 50 i f C forward current ( ma ) 20 95 11031 t / t Cturn on / turn off time ( s ) off on saturated operation v s =5v r l =1k ? t off t on
tcet1110/ tcet1110g document number 83546 rev. 1.6, 26-oct-04 vishay semiconductors www.vishay.com 9 package dimensions in mm package dimensions in mm 14789 14792
www.vishay.com 10 document number 83546 rev. 1.6, 26-oct-04 tcet1110/ tcet1110g vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performan ce of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate rele ases of those substances in to the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its po licy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buy er use vishay semiconductors products for any unintended or unauthorized application, the buyer sh all indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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